Preprint 1996-034
The Energy Transport and the Drift Diffusion Equations as Relaxation
Limits of the Hydrodynamic Model for Semiconductors
Ingenuin Gasser and Roberto Natalini
Abstract:
Two relaxation limits of the hydrodynamic model for semiconductors are
investigated. Using the compensated compactness tools we show the convergence
of (scaled) entropy solutions of the hydrodynamic model to the solutions of
the energy transport and the drift--diffusion equations, according
respectively to different time scales.
- Paper:
- Available as PostScript
- Title:
- The Energy Transport and the Drift Diffusion Equations as Relaxation
Limits of the Hydrodynamic Model for Semiconductors
- Author(s):
- Ingenuin Gasser,
<gasser@math.tu-berlin.de>
- Roberto Natalini,
<natalini@asterix.iac.rm.cnr.it>
- Publishing information:
- Quaderno IAC n. 20, 1996
- Submitted by:
-
<natalini@asterix.iac.rm.cnr.it>
September 23 1996.
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